View ZXMP6A17G_364770.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

ZXMP6A17G
60V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = -60V: RDS(on) = 0.125 : ID = -4.1A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
SOT223
FEATURES
* Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT223 package
APPLICATIONS
* DC-DC converters * Power management functions * Relay and solenoid driving * Motor control
PINOUT
ORDERING INFORMATION
DEVICE ZXMP6A17GTA ZXMP6A17GTC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units
DEVICE MARKING
* ZXMP 6A17
Top View
ISSUE 1 - MAY 2005 1
SEMICONDUCTORS
ZXMP6A17G
ABSOLUTE MAXIMUM RATING
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V GS = -10V; (V GS = -10V; (V GS = -10V; T A =25C) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T A =25C Linear Derating Factor
(a) (c) (b)
SYMBOL V DSS V GS T A =25C) (b) T A =70C) (b) (a) ID
LIMIT -60 20 -4.1 -3.3 -3.0 -13.7 -4.8 -13.7 2.0 16 3.9 31 -55 to +150
UNIT V V A
I DM IS I SM PD PD T j :T stg
A A A W mW/C W mW/C C
Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER Junction to Ambient Junction to Ambient NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
(a) (b)
SYMBOL R JA R JA
VALUE 62.5 32.2
UNIT C/W C/W
ISSUE 1 - MAY 2005
SEMICONDUCTORS
2
ZXMP6A17G
CHARACTERISTICS
-ID Drain Current (A)
DS(on) 10 Limited
Max Power Dissipation (W)
R
2.0 1.6 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 140 160
1
DC 1s 100ms 10ms Single Pulse Tamb=25C 1ms 100s
100m
10m
-VDS Drain-Source Voltage (V)
1
10
100
Temperature (C)
Safe Operating Area
70
Tamb=25C
Derating Curve
Thermal Resistance (C/W)
60 50 40 30 20 10
MaximumPower (W)
100
Single Pulse Tamb=25C
D=0.5
10
D=0.2 D=0.1
Single Pulse D=0.05
0 100 1m
10m 100m
1
10
100
1k
1 100 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 1 - MAY 2005 3
SEMICONDUCTORS
ZXMP6A17G
ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated)
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC
(3)
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs
-60 -1 100 -1.0 0.125 0.190 4.7
V A nA V
I D =-250A, V GS =0V V DS =-60V, V GS =0V V GS = 20V, V DS =0V I =-250 A, V DS = V GS
D
V GS =-10V, I D =-2.2A V GS =-4.5V, I D =-1.8A S V DS =-15V,I D =-2.2A
Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING
(2) (3)
C iss C oss C rss
637 70 53
pF pF pF V DS =-30V, V GS =0V, f=1MHz
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge
(3)
t d(on) tr t d(off) tf Qg Qg Q gs Q gd
2.6 3.4 26.2 11.3 9.8 17.7 1.6 4.4
ns ns ns ns nC nC nC nC V DS =-30V,V GS =-10V, I D =-2.2A V DS =-30V,V GS =-5V, I D =-2.2A V DD =-30V, I D =-1A R G 6.0 , V GS =-10V
V SD t rr Q rr
-0.85 25.1 27.2
-0.95
V ns nC
T J =25 C, I S =-2A, V GS =0V T J =25 C, I F =-1.7A, di/dt= 100A/ s
NOTES (1) Measured under pulsed conditions. Width 300 s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
ISSUE 1 - MAY 2005
SEMICONDUCTORS
4
ZXMP6A17G
TYPICAL CHARACTERISTICS
ISSUE 1 - MAY 2005 5
SEMICONDUCTORS
ZXMP6A17G
TYPICAL CHARACTERISTICS
ISSUE 1 - MAY 2005
SEMICONDUCTORS
6
ZXMP6A17G
PACKAGE OUTLINE PAD LAYOUT DETAILS
PACKAGE DIMENSIONS
DIM Millimeters Min A A1 b b2 C D 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 Inches Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264 e e1 E E1 L DIM Millimeters Min Max Inches Min Max
2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 -
0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 -
(c) Zetex Semiconductors plc 2005
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com
ISSUE 1 - MAY 2005 7
SEMICONDUCTORS

▲Up To Search▲

Price & Availability of ZXMP6A17G

	To Download ZXMP6A17G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .